As silicon-based semiconductors reach performance limits, gallium nitride is becoming the next go-to material for several technologies. Holding GaN back, however, is its high numbers of defects. Better understanding how GaN defects form at the atomic level could improve the performance of the devices made using this material. Researchers have taken a significant step by examining and determining six core configurations of the GaN lattice.
The culprit of some GaN defects could be nitrogen